Ultra Wide Bandgap Semiconductor Materials
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Ultra-wide Bandgap Semiconductor Materials
- Author : Meiyong Liao,Bo Shen,Zhanguo Wang
- Publisher : Elsevier
- Release Date : 2019-06-18
- Total pages : 503
- ISBN : 9780128172568
- File Size : 18,6 Mb
- Total Download : 193
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Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
Wide Bandgap Semiconductors for Power Electronics
- Author : Peter Wellmann,Noboru Ohtani,Roland Rupp
- Publisher : John Wiley & Sons
- Release Date : 2021-09-28
- Total pages : 743
- ISBN : 9783527824717
- File Size : 29,6 Mb
- Total Download : 503
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Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.
Wide Bandgap Semiconductor Materials and Devices 19
- Author : J. Hite,V. Chakrapani,J. Zavada,T. J. Anderson,S. Kilgore
- Publisher : The Electrochemical Society
- Release Date : 2018-05-04
- Total pages : 130
- ISBN : 9781607688358
- File Size : 28,7 Mb
- Total Download : 776
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PDF book entitled Wide Bandgap Semiconductor Materials and Devices 19 written by J. Hite,V. Chakrapani,J. Zavada,T. J. Anderson,S. Kilgore and published by The Electrochemical Society which was released on 2018-05-04 with total hardcover pages 130, the book become popular and critical acclaim.
Wide Bandgap Semiconductor Materials and Devices 20
- Author : S. Jang,V. Chakrapani,J. Zavada,T. J. Anderson,J. Hite,E. Douglas
- Publisher : The Electrochemical Society
- Release Date : 2019-05-17
- Total pages : 53
- ISBN : 9781607688709
- File Size : 42,8 Mb
- Total Download : 144
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This issue of ECS Transactions includes papers based on presentations from the symposium "Wide Bandgap Semiconductor Materials and Devices 20," originally held at the 235th ECS Meeting in Dallas, Texas, May 26-30, 2019.
Thermal Management of Gallium Nitride Electronics
- Author : Marko Tadjer,Travis Anderson
- Publisher : Woodhead Publishing
- Release Date : 2022-07-15
- Total pages : 560
- ISBN : 9780128211052
- File Size : 26,8 Mb
- Total Download : 342
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Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs. Includes the fundamentals of thermal management of wide-bandgap semiconductors, with historical context, a review of common heating issues, thermal transport physics, and characterization methods Reviews the latest strategies to overcome heating issues through materials modeling, growth and device design strategies Touches on emerging, real-world applications for thermal management strategies in power electronics
Gallium Oxide
- Author : Masataka Higashiwaki,Shizuo Fujita
- Publisher : Springer Nature
- Release Date : 2020-04-23
- Total pages : 764
- ISBN : 9783030371531
- File Size : 23,9 Mb
- Total Download : 101
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This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.
Gallium Oxide
- Author : Stephen Pearton,Fan Ren,Michael Mastro
- Publisher : Elsevier
- Release Date : 2018-10-15
- Total pages : 507
- ISBN : 9780128145227
- File Size : 32,8 Mb
- Total Download : 732
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Gallium Oxide: Technology, Devices and Applications discusses the wide bandgap semiconductor and its promising applications in power electronics, solar blind UV detectors, and in extreme environment electronics. It also covers the fundamental science of gallium oxide, providing an in-depth look at the most relevant properties of this materials system. High quality bulk Ga2O3 is now commercially available from several sources and n-type epi structures are also coming onto the market. As researchers are focused on creating new complex structures, the book addresses the latest processing and synthesis methods. Chapters are designed to give readers a complete picture of the Ga2O3 field and the area of devices based on Ga2O3, from their theoretical simulation, to fabrication and application. Provides an overview of the advantages of the gallium oxide materials system, the advances in in bulk and epitaxial crystal growth, device design and processing Reviews the most relevant applications, including photodetectors, FETs, FINFETs, MOSFETs, sensors, catalytic applications, and more Addresses materials properties, including structural, mechanical, electrical, optical, surface and contact
Wide Bandgap Semiconductor-Based Electronics
- Author : Fan Ren,Stephen J Pearton
- Publisher : Myprint
- Release Date : 2020-10-08
- Total pages : 586
- ISBN : 0750325178
- File Size : 47,8 Mb
- Total Download : 841
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This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers provide reviews on the latest development of materials and devices in these systems.
Optoelectronic Devices
- Author : M Razeghi,Mohamed Henini
- Publisher : Elsevier
- Release Date : 2004
- Total pages : 602
- ISBN : 0080444261
- File Size : 39,8 Mb
- Total Download : 759
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Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Wide Bandgap Semiconductor Materials and Devices 12
- Author : J. A. Bardwell
- Publisher : The Electrochemical Society
- Release Date : 2011-04
- Total pages : 222
- ISBN : 9781566778671
- File Size : 43,5 Mb
- Total Download : 229
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This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and devices, encompassing inorganic wide-bandgap semiconductors: III-nitrides (e. g. gallium nitride), II-oxides, SiC, diamond, II-VI, and also emerging materials such as organic-inorganic nanoscale structures.
Topics in Growth and Device Processing of III-V Semiconductors
- Author : S. J. Pearton,C. R. Abernathy,F. Ren
- Publisher : World Scientific
- Release Date : 1996
- Total pages : 568
- ISBN : 9810218842
- File Size : 34,5 Mb
- Total Download : 936
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This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
GaN-based Materials and Devices
- Author : Michael Shur,Robert Foster Davis
- Publisher : World Scientific
- Release Date : 2004
- Total pages : 310
- ISBN : 9812562362
- File Size : 48,6 Mb
- Total Download : 562
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The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
III-Nitride Electronic Devices
- Author : Rongming Chu,Keisuke Shinohara
- Publisher : Academic Press
- Release Date : 2019-10
- Total pages : 540
- ISBN : 9780128175446
- File Size : 21,7 Mb
- Total Download : 854
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III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field
Wide Energy Bandgap Electronic Devices
- Author : Fan Ren,J. C. Zolper
- Publisher : World Scientific
- Release Date : 2003
- Total pages : 526
- ISBN : 9789812382467
- File Size : 24,6 Mb
- Total Download : 138
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Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.
Gallium Nitride and Related Wide Bandgap Materials and Devices
- Author : Roy Szweda
- Publisher : Elsevier Science Limited
- Release Date : 2000
- Total pages : 446
- ISBN : 1856173631
- File Size : 41,9 Mb
- Total Download : 599
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The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
Gallium Nitride Processing for Electronics, Sensors and Spintronics
- Author : Stephen J. Pearton,Cammy R. Abernathy,Fan Ren
- Publisher : Springer Science & Business Media
- Release Date : 2006-07-06
- Total pages : 380
- ISBN : 9781846283598
- File Size : 32,9 Mb
- Total Download : 111
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Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Wide Bandgap Semiconductor Power Devices
- Author : B. Jayant Baliga
- Publisher : Woodhead Publishing
- Release Date : 2018-10-17
- Total pages : 418
- ISBN : 9780081023075
- File Size : 53,8 Mb
- Total Download : 412
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Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Quantum Physics of Semiconductor Materials and Devices
- Author : Debdeep Jena
- Publisher : Oxford University Press
- Release Date : 2022-06-25
- Total pages : 897
- ISBN : 9780198856849
- File Size : 50,5 Mb
- Total Download : 653
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"Quantum Phenomena do not occur in a Hilbert space. They occur in a laboratory". - Asher Peres Semiconductor physics is a laboratory to learn and discover the concepts of quantum mechanics and thermodynamics, condensed matter physics, and materials science, and the payoffs are almost immediate in the form of useful semiconductor devices. Debdeep Jena has had the opportunity to work on both sides of the fence - on the fundamental materials science and quantum physics of semiconductors, and in their applications in semiconductor electronic and photonic devices. In Quantum Physics of Semiconductors and Nanostructures, Jena uses this experience to make each topic as tangible and accessible as possible to students at all levels. Consider the simplest physical processes that occur in semiconductors: electron or hole transport in bands and over barriers, collision of electrons with the atoms in the crystal, or when electrons and holes annihilate each other to produce a photon. The correct explanation of these processes require a quantum mechanical treatment. Any shortcuts lead to misconceptions that can take years to dispel, and sometimes become roadblocks towards a deeper understanding and appreciation of the richness of the subject. A typical introductory course on semiconductor physics would then require prerequisites of quantum mechanics, statistical physics and thermodynamics, materials science, and electromagnetism. Rarely would a student have all this background when (s)he takes a course of this nature in most universities. Jena's work fills in these gaps and gives students the background and deeper understanding of the quantum physics of semiconductors and nanostructures.
Wide Bandgap Semiconductor Electronics And Devices
- Author : Singisetti Uttam,Razzak Towhidur,Zhang Yuewei
- Publisher : World Scientific
- Release Date : 2019-12-10
- Total pages : 260
- ISBN : 9789811216497
- File Size : 10,6 Mb
- Total Download : 644
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With the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.
SiC Materials and Devices
- Author : Michael Shur
- Publisher : World Scientific
- Release Date : 2007
- Total pages : 143
- ISBN : 9789812703835
- File Size : 31,6 Mb
- Total Download : 101
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Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.
Wide Bandgap Semiconductor Materials and Devices 16
- Author : S. Jang,K. Shenai,G. W. Hunter,F. Ren,C. O’Dwyer,K. Mishra
- Publisher : The Electrochemical Society
- Release Date : 2015
- Total pages : 347
- ISBN : 9781607685913
- File Size : 54,6 Mb
- Total Download : 420
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PDF book entitled Wide Bandgap Semiconductor Materials and Devices 16 written by S. Jang,K. Shenai,G. W. Hunter,F. Ren,C. O’Dwyer,K. Mishra and published by The Electrochemical Society which was released on 2015 with total hardcover pages 347, the book become popular and critical acclaim.