Industry Standard Fdsoi Compact Model Bsim Img For Ic Design

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Industry Standard FDSOI Compact Model BSIM-IMG for IC Design

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design
  • Author : Chenming Hu,Sourabh Khandelwal,Yogesh Singh Chauhan,Thomas Mckay,Josef Watts,Juan Pablo Duarte,Pragya Kushwaha,Harshit Agarwal
  • Publisher : Woodhead Publishing
  • Release Date : 2019-05-21
  • Total pages : 258
  • ISBN : 9780081024027
  • File Size : 47,6 Mb
  • Total Download : 654
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Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model. Provides a detailed discussion of the BSIM-IMG model and the industry standard simulation model for FDSOI, all presented by the developers of the model Explains the complex operation of the FDSOI device and its use of two independent control inputs Addresses the parameter extraction challenges for those using this model

Springer Handbook of Semiconductor Devices

Springer Handbook of Semiconductor Devices
  • Author : Massimo Rudan,Rossella Brunetti,Susanna Reggiani
  • Publisher : Springer Nature
  • Release Date : 2022-11-10
  • Total pages : 1680
  • ISBN : 9783030798277
  • File Size : 52,9 Mb
  • Total Download : 957
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This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.

FinFET Modeling for IC Simulation and Design

FinFET Modeling for IC Simulation and Design
  • Author : Yogesh Singh Chauhan,Darsen Duane Lu,Vanugopalan Sriramkumar,Sourabh Khandelwal,Juan Pablo Duarte,Navid Payvadosi,Ai Niknejad,Chenming Hu
  • Publisher : Academic Press
  • Release Date : 2015-03-17
  • Total pages : 304
  • ISBN : 9780124200852
  • File Size : 44,9 Mb
  • Total Download : 711
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This book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: Why you should use FinFET The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG) Parameter extraction in BSIM-CMG FinFET circuit design and simulation Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts’ insight into the specifications of the standard The first book on the industry-standard FinFET model - BSIM-CMG

Compact Modeling

Compact Modeling
  • Author : Gennady Gildenblat
  • Publisher : Springer Science & Business Media
  • Release Date : 2010-06-22
  • Total pages : 527
  • ISBN : 9048186145
  • File Size : 42,9 Mb
  • Total Download : 764
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Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

MOSFET Models for SPICE Simulation

MOSFET Models for SPICE Simulation
  • Author : William Liu
  • Publisher : Wiley-IEEE Press
  • Release Date : 2001-02-21
  • Total pages : 608
  • ISBN : UOM:39015049710448
  • File Size : 28,9 Mb
  • Total Download : 624
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An expert guide to understanding and making optimum use of BSIM Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past few years, established itself as the de facto standard MOSFET SPICE model for circuit simulation and CMOS technology development. Yet, until now, there have been no independent expert guides or tutorials to supplement the various BSIM manuals currently available. Written by a noted expert in the field, this book fills that gap in the literature by providing a comprehensive guide to understanding and making optimal use of BSIM3 and BSIM4. Drawing upon his extensive experience designing with BSIM, William Liu provides a brief history of the model, discusses the various advantages of BSIM over other models, and explores the reasons why BSIM3 has been adopted by the majority of circuit manufacturers. He then provides engineers with the detailed practical information and guidance they need to master all of BSIM's features. He: Summarizes key BSIM3 components Represents the BSIM3 model with equivalent circuits for various operating conditions Provides a comprehensive glossary of modeling terminology Lists alphabetically BSIM3 parameters along with their meanings and relevant equations Explores BSIM3's flaws and provides improvement suggestions Describes all of BSIM4's improvements and new features Provides useful SPICE files, which are available online at the Wiley ftp site

MOSFET Modeling & BSIM3 User’s Guide

MOSFET Modeling & BSIM3 User’s Guide
  • Author : Yuhua Cheng,Chenming Hu
  • Publisher : Springer Science & Business Media
  • Release Date : 2007-05-08
  • Total pages : 462
  • ISBN : 9780306470509
  • File Size : 19,9 Mb
  • Total Download : 809
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Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.

Mobile Communication Networks: 5G and a Vision of 6G

Mobile Communication Networks: 5G and a Vision of 6G
  • Author : Mladen Božanić,Saurabh Sinha
  • Publisher : Springer Nature
  • Release Date : 2021-02-15
  • Total pages : 335
  • ISBN : 9783030692735
  • File Size : 18,8 Mb
  • Total Download : 336
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This book contributes to the body of scholarly knowledge by exploring the main ideas of wireless networks of past, present, and future, trends in the field of networking, the capabilities of 5G and technologies that are potential enablers of 6G, potential 6G applications and requirements, as well as unique challenges and opportunities that 6G research is going to offer over the next decade. It covers research topics such as communication via millimeter-waves, terahertz waves and visible light to enable faster speeds, as well as research into achieving other basic requirements of 6G networks. These include low end-to-end latency, high energy efficiency, coverage that is ubiquitous and always-on, integration of terrestrial wireless with non-terrestrial networks, network management that is made more effective by connected intelligence with machine learning capabilities, as well as support for the evolution of old service classes and support for new ones.

Silicon-On-Insulator (SOI) Technology

Silicon-On-Insulator (SOI) Technology
  • Author : O. Kononchuk,B.-Y. Nguyen
  • Publisher : Elsevier
  • Release Date : 2014-06-19
  • Total pages : 496
  • ISBN : 9780857099259
  • File Size : 46,5 Mb
  • Total Download : 263
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Silicon-On-Insulator (SOI) Technology: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics. The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Part two covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors. The extensive coverage provided by Silicon-On-Insulator (SOI) Technology makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors. Covers SOI transistors and circuits, as well as manufacturing processes and reliability Looks at applications such as memory, power devices, and photonics

BSIM4 and MOSFET Modeling for IC Simulation

BSIM4 and MOSFET Modeling for IC Simulation
  • Author : Weidong Liu,Chenming Hu
  • Publisher : World Scientific
  • Release Date : 2011
  • Total pages : 435
  • ISBN : 9789812568632
  • File Size : 16,8 Mb
  • Total Download : 402
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This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.

NANO-CHIPS 2030

NANO-CHIPS 2030
  • Author : Boris Murmann,Bernd Hoefflinger
  • Publisher : Springer Nature
  • Release Date : 2020-06-08
  • Total pages : 592
  • ISBN : 9783030183387
  • File Size : 22,8 Mb
  • Total Download : 912
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In this book, a global team of experts from academia, research institutes and industry presents their vision on how new nano-chip architectures will enable the performance and energy efficiency needed for AI-driven advancements in autonomous mobility, healthcare, and man-machine cooperation. Recent reviews of the status quo, as presented in CHIPS 2020 (Springer), have prompted the need for an urgent reassessment of opportunities in nanoelectronic information technology. As such, this book explores the foundations of a new era in nanoelectronics that will drive progress in intelligent chip systems for energy-efficient information technology, on-chip deep learning for data analytics, and quantum computing. Given its scope, this book provides a timely compendium that hopes to inspire and shape the future of nanoelectronics in the decades to come.

Radiation Imaging Detectors Using SOI Technology

Radiation Imaging Detectors Using SOI Technology
  • Author : Yasuo Arai,Ikuo Kurachi
  • Publisher : Morgan & Claypool Publishers
  • Release Date : 2017-02-15
  • Total pages : 73
  • ISBN : 9781627056915
  • File Size : 50,6 Mb
  • Total Download : 154
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Silicon-on-Insulator (SOI) technology is widely used in high-performance and low-power semiconductor devices. The SOI wafers have two layers of active silicon (Si), and normally the bottom Si layer is a mere physical structure. The idea of making intelligent pixel detectors by using the bottom Si layer as sensors for X-ray, infrared light, high-energy particles, neutrons, etc. emerged from very early days of the SOI technology. However, there have been several difficult issues with fabricating such detectors and they have not become very popular until recently. This book offers a comprehensive overview of the basic concepts and research issues of SOI radiation image detectors. It introduces basic issues to implement the SOI detector and presents how to solve these issues. It also reveals fundamental techniques, improvement of radiation tolerance, applications, and examples of the detectors. Since the SOI detector has both a thick sensing region and CMOS transistors in a monolithic die, many ideas have emerged to utilize this technology. This book is a good introduction for people who want to develop or use SOI detectors.

Modern Semiconductor Devices for Integrated Circuits

Modern Semiconductor Devices for Integrated Circuits
  • Author : Chenming Hu
  • Publisher : Prentice Hall
  • Release Date : 2010
  • Total pages : 387
  • ISBN : 9780136085256
  • File Size : 40,7 Mb
  • Total Download : 626
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Modern Semiconductor Devices for Integrated Circuits, First Edition introduces readers to the world of modern semiconductor devices with an emphasis on integrated circuit applications. KEY TOPICS: Electrons and Holes in Semiconductors; Motion and Recombination of Electrons and Holes; Device Fabrication Technology; PN and Metal–Semiconductor Junctions; MOS Capacitor; MOS Transistor; MOSFETs in ICs—Scaling, Leakage, and Other Topics; Bipolar Transistor. MARKET: Written by an experienced teacher, researcher, and expert in industry practices, this succinct and forward-looking text is appropriate for anyone interested in semiconductor devices for integrated curcuits, and serves as a suitable reference text for practicing engineers.

Advanced SPICE Model for GaN HEMTs (ASM-HEMT)

Advanced SPICE Model for GaN HEMTs (ASM-HEMT)
  • Author : Sourabh Khandelwal
  • Publisher : Springer
  • Release Date : 2021-12-18
  • Total pages : 188
  • ISBN : 3030777294
  • File Size : 19,5 Mb
  • Total Download : 738
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This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.

VLSI Design

VLSI Design
  • Author : Esteban Tlelo-Cuautle,Sheldon X.-D. Tan
  • Publisher : BoD – Books on Demand
  • Release Date : 2012-01-20
  • Total pages : 306
  • ISBN : 9789533078847
  • File Size : 26,9 Mb
  • Total Download : 354
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This book provides some recent advances in design nanometer VLSI chips. The selected topics try to present some open problems and challenges with important topics ranging from design tools, new post-silicon devices, GPU-based parallel computing, emerging 3D integration, and antenna design. The book consists of two parts, with chapters such as: VLSI design for multi-sensor smart systems on a chip, Three-dimensional integrated circuits design for thousand-core processors, Parallel symbolic analysis of large analog circuits on GPU platforms, Algorithms for CAD tools VLSI design, A multilevel memetic algorithm for large SAT-encoded problems, etc.

Junctionless Field-Effect Transistors

Junctionless Field-Effect Transistors
  • Author : Shubham Sahay,Mamidala Jagadesh Kumar
  • Publisher : John Wiley & Sons
  • Release Date : 2019-01-28
  • Total pages : 496
  • ISBN : 9781119523529
  • File Size : 46,6 Mb
  • Total Download : 637
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A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.

Self-Sensing Concrete in Smart Structures

Self-Sensing Concrete in Smart Structures
  • Author : Baoguo Han,Xun Yu,Jinping Ou
  • Publisher : Butterworth-Heinemann
  • Release Date : 2014-07-30
  • Total pages : 398
  • ISBN : 9780128006580
  • File Size : 25,8 Mb
  • Total Download : 329
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Concrete is the second most used building material in the world after water. The problem is that over time the material becomes weaker. As a response, researchers and designers are developing self-sensing concrete which not only increases longevity but also the strength of the material. Self-Sensing Concrete in Smart Structures provides researchers and designers with a guide to the composition, sensing mechanism, measurement, and sensing properties of self-healing concrete along with their structural applications Provides a systematic discussion of the structure of intrinsic self-sensing concrete Compositions of intrinsic self-sensing concrete and processing of intrinsic self-sensing concrete Explains the sensing mechanism, measurement, and sensing properties of intrinsic self-sensing concrete

Materials for Supercapacitor Applications

Materials for Supercapacitor Applications
  • Author : M. Aulice Scibioh,B. Viswanathan
  • Publisher : Elsevier
  • Release Date : 2020-01-26
  • Total pages : 400
  • ISBN : 9780128198599
  • File Size : 12,9 Mb
  • Total Download : 523
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Materials for Supercapacitor Applications provides a snapshot of the present status of this rapidly growing field. It covers motivations, innovations, ongoing breakthroughs in research and development, innovative materials, impacts, and perspectives, as well as the challenges and technical barriers to identifying an ideal material for practical applications. This comprehensive reference by electro-chemists explains concepts in materials selection and their unique applications based on their electro-chemical properties. Chemists, chemical and electrical engineers, material scientists, and research scholars and students interested in energy will benefit from this overview of many important reference points in understanding the materials used in supercapacitors. Provides an overview of the formulation for new materials and how to characterize them for supercapacitor applications Describes all the information on the available materials for supercapacitor applications Outlines potential material characterization methods Discusses perspectives and future directions of the field

Scaling Issues and Design of MEMS

Scaling Issues and Design of MEMS
  • Author : Salvatore Baglio,Salvatore Castorina,Nicolo Savalli
  • Publisher : John Wiley & Sons
  • Release Date : 2008-07-31
  • Total pages : 244
  • ISBN : 0470034084
  • File Size : 20,9 Mb
  • Total Download : 180
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This accessible volume delivers a complete design methodology for microelectromechanical systems (MEMS). Focusing on the scaling of an autonomous micro-system, it explains the real-world problems and theoretical concepts of several different aspects inherent to the miniaturization of sensors and actuators. It reports on the analysis of dimensional scaling, the modelling, design and experimental characterization of a wide range of specific devices and applications, including: temperature microsensors based on an integrated complementary metal-oxide-semiconductor (CMOS) thermocouple; mechanical sensors; inductive microsensors for the detection of magnetic particles; electrostatic, thermal and magnetic actuators. With an original approach, this informative text encompasses the entire range of themes currently at the forefront of MEMS, including an analysis of the importantissue of energy sources in MEMS. In addition, the book explores contemporary research into the design of complete MEMS with a case study on colonies of microbots. Scaling Issues and Design of MEMS aims to improve the reader’s basic knowledge on modelling issues of complex micro devices, and to encourage new thinking about scaling effects. It will provide support for practising engineers working within the defence industry and will also be of welcome interest to graduate students and researchers with a background in electronic engineering, physics, chemistry, biology and materials science.

Millimeter-Wave Integrated Circuits

Millimeter-Wave Integrated Circuits
  • Author : Mladen Božanić,Saurabh Sinha
  • Publisher : Springer Nature
  • Release Date : 2020-03-16
  • Total pages : 248
  • ISBN : 9783030443986
  • File Size : 46,5 Mb
  • Total Download : 318
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This peer-reviewed book explores the methodologies that are used for effective research, design and innovation in the vast field of millimeter-wave circuits, and describes how these have to be modified to fit the uniqueness of high-frequency nanoelectronics design. Each chapter focuses on a specific research challenge related to either small form factors or higher operating frequencies. The book first examines nanodevice scaling and the emerging electronic design automation tools that can be used in millimeter-wave research, as well as the singular challenges of combining deep-submicron and millimeter-wave design. It also demonstrates the importance of considering, in the millimeter-wave context, system-level design leading to differing packaging options. Further, it presents integrated circuit design methodologies for all major transceiver blocks typically employed at millimeter-wave frequencies, as these methodologies are normally fundamentally different from the traditional design methodologies used in analogue and lower-frequency electronics. Lastly, the book discusses the methodologies of millimeter-wave research and design for extreme or harsh environments, rebooting electronics, the additional opportunities for terahertz research, and the main differences between the approaches taken in millimeter-wave research and terahertz research.

Sway

Sway
  • Author : Pragya Agarwal
  • Publisher : Bloomsbury Publishing
  • Release Date : 2020-04-02
  • Total pages : 288
  • ISBN : 9781472971371
  • File Size : 47,6 Mb
  • Total Download : 883
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'Passionate and urgent.' Guardian, Book of the Week 'A must-read for all.' Stylist, best new books for 2020 'Cogently argued and intensely persuasive. Groundbreaking Work.' Waterstones, best new books of April 'Impressive and much-needed.' Financial Times, Best Business Books April to June 'Admirably detailed.' Prospect Magazine 'Practical, useful, readable and essential for the times we are living in.' Nikesh Shukla 'An eye-opening book that I hope will be widely read.' Angela Saini 'If you think you don't need to read this book, you really need to read this book.' Jane Garvey 'An eye-opening book looking at unconscious bias. Meticulously researched and well written. It will make you think hard about the judgements you make. An essential read for our times.' Kavita Puri, BBC Journalist and author For the first time, behavioural and data scientist, activist and writer Dr Pragya Agarwal unravels the way our implicit or 'unintentional' biases affect the way we communicate and perceive the world, how they affect our decision-making, and how they reinforce and perpetuate systemic and structural inequalities. Sway is a thoroughly researched and comprehensive look at unconscious bias and how it impacts day-to-day life, from job interviews to romantic relationships to saving for retirement. It covers a huge number of sensitive topics - sexism, racism, ageism, homophobia, colourism - with tact, and combines statistics with stories to paint a fuller picture and enhance understanding. Throughout, Pragya clearly delineates theories with a solid grounding in science, answering questions such as: do our roots for prejudice lie in our evolutionary past? What happens in our brains when we are biased? How has bias affected technology? If we don't know about it, are we really responsible for it? At a time when partisan political ideologies are taking centre stage, and we struggle to make sense of who we are and who we want to be, it is crucial that we understand why we act the way we do. This book will enables us to open our eyes to our own biases in a scientific and non-judgmental way.

Crystal Fire

Crystal Fire
  • Author : Michael Riordan,Lillian Hoddeson
  • Publisher : W. W. Norton & Company
  • Release Date : 1998
  • Total pages : 370
  • ISBN : 0393318516
  • File Size : 51,5 Mb
  • Total Download : 691
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Focuses on the human factors behind the invention of the transistor, highlighting the pride and scientific ambitions of the team who spawned the epoch-making technology