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Science Abstracts
- Author : Anonim
- Publisher : Unknown
- Release Date : 1995
- Total pages : 1986
- ISBN : OSU:32435054907035
- File Size : 47,5 Mb
- Total Download : 959
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PDF book entitled Science Abstracts written by Anonim and published by Unknown which was released on 1995 with total hardcover pages 1986, the book become popular and critical acclaim.
Compact Modeling
- Author : Gennady Gildenblat
- Publisher : Springer Science & Business Media
- Release Date : 2010-06-22
- Total pages : 527
- ISBN : 9048186145
- File Size : 49,8 Mb
- Total Download : 423
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Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Chinese Journal of Electronics
- Author : Anonim
- Publisher : Unknown
- Release Date : 2004
- Total pages : 778
- ISBN : CORNELL:31924092830169
- File Size : 33,9 Mb
- Total Download : 382
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PDF book entitled Chinese Journal of Electronics written by Anonim and published by Unknown which was released on 2004 with total hardcover pages 778, the book become popular and critical acclaim.
Index to IEEE Publications
- Author : Institute of Electrical and Electronics Engineers
- Publisher : Unknown
- Release Date : 1995
- Total pages : 1470
- ISBN : UOM:39015040325386
- File Size : 25,6 Mb
- Total Download : 903
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Download Index to IEEE Publications in PDF, Epub, and Kindle
Issues for 1973- cover the entire IEEE technical literature.
Industry Standard FDSOI Compact Model BSIM-IMG for IC Design
- Author : Chenming Hu,Sourabh Khandelwal,Yogesh Singh Chauhan,Thomas Mckay,Josef Watts,Juan Pablo Duarte,Pragya Kushwaha,Harshit Agarwal
- Publisher : Woodhead Publishing
- Release Date : 2019-05-22
- Total pages : 0
- ISBN : 0081024010
- File Size : 55,9 Mb
- Total Download : 239
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Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.
MOSFET Modeling & BSIM3 User’s Guide
- Author : Yuhua Cheng,Chenming Hu
- Publisher : Springer Science & Business Media
- Release Date : 2007-05-08
- Total pages : 462
- ISBN : 9780306470509
- File Size : 33,9 Mb
- Total Download : 607
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Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
模拟CMOS集成电路设计(国外大学优秀教材——微电子类系列(影印版))
- Author : Behzad Razavi
- Publisher : 清华大学出版社有限公司
- Release Date : 2005
- Total pages : 712
- ISBN : 7302108862
- File Size : 32,7 Mb
- Total Download : 418
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本书介绍了模拟电路设计的基本概念, 说明了CMOS模拟集成电路设计技术的重要作用, 描述了MOS器件的物理模型及工作特性等.
Mosfet Modeling for Circuit Analysis and Design
- Author : Anonim
- Publisher : Unknown
- Release Date : 2023
- Total pages : 229
- ISBN : 9789814477970
- File Size : 26,6 Mb
- Total Download : 491
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PDF book entitled Mosfet Modeling for Circuit Analysis and Design written by Anonim and published by Unknown which was released on 2023 with total hardcover pages 229, the book become popular and critical acclaim.
Nano-CMOS Circuit and Physical Design
- Author : Ban Wong,Anurag Mittal,Yu Cao,Greg W. Starr
- Publisher : John Wiley & Sons
- Release Date : 2005-04-08
- Total pages : 393
- ISBN : 9780471678861
- File Size : 48,8 Mb
- Total Download : 850
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Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.
POWER/HVMOS Devices Compact Modeling
- Author : Wladyslaw Grabinski,Thomas Gneiting
- Publisher : Springer Science & Business Media
- Release Date : 2010-07-20
- Total pages : 200
- ISBN : 9789048130467
- File Size : 21,9 Mb
- Total Download : 455
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Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.
Fundamentals of Modern VLSI Devices
- Author : Yuan Taur,Tak H. Ning
- Publisher : Cambridge University Press
- Release Date : 2013-05-02
- Total pages : 1156
- ISBN : 9781107393998
- File Size : 21,8 Mb
- Total Download : 811
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Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
Transistor Level Modeling for Analog/RF IC Design
- Author : Wladyslaw Grabinski,Bart Nauwelaers,Dominique Schreurs
- Publisher : Springer Science & Business Media
- Release Date : 2006-07-01
- Total pages : 294
- ISBN : 9781402045561
- File Size : 13,7 Mb
- Total Download : 578
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The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
Microwave Circuit Design Using Linear and Nonlinear Techniques
- Author : George D. Vendelin,Anthony M. Pavio,Ulrich L. Rohde
- Publisher : John Wiley & Sons
- Release Date : 2005-10-03
- Total pages : 1080
- ISBN : 9780471715825
- File Size : 27,8 Mb
- Total Download : 364
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The ultimate handbook on microwave circuit design with CAD. Full of tips and insights from seasoned industry veterans, Microwave Circuit Design offers practical, proven advice on improving the design quality of microwave passive and active circuits-while cutting costs and time. Covering all levels of microwave circuit design from the elementary to the very advanced, the book systematically presents computer-aided methods for linear and nonlinear designs used in the design and manufacture of microwave amplifiers, oscillators, and mixers. Using the newest CAD tools, the book shows how to design transistor and diode circuits, and also details CAD's usefulness in microwave integrated circuit (MIC) and monolithic microwave integrated circuit (MMIC) technology. Applications of nonlinear SPICE programs, now available for microwave CAD, are described. State-of-the-art coverage includes microwave transistors (HEMTs, MODFETs, MESFETs, HBTs, and more), high-power amplifier design, oscillator design including feedback topologies, phase noise and examples, and more. The techniques presented are illustrated with several MMIC designs, including a wideband amplifier, a low-noise amplifier, and an MMIC mixer. This unique, one-stop handbook also features a major case study of an actual anticollision radar transceiver, which is compared in detail against CAD predictions; examples of actual circuit designs with photographs of completed circuits; and tables of design formulae.
Analog Circuit Design
- Author : Jim Williams
- Publisher : Elsevier
- Release Date : 2016-06-30
- Total pages : 408
- ISBN : 9781483105154
- File Size : 24,8 Mb
- Total Download : 302
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Analog Circuit Design
Mosfet Modeling for VLSI Simulation
- Author : Narain Arora
- Publisher : World Scientific
- Release Date : 2007
- Total pages : 633
- ISBN : 9789812707581
- File Size : 32,6 Mb
- Total Download : 896
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Download Mosfet Modeling for VLSI Simulation in PDF, Epub, and Kindle
A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Charge-Based MOS Transistor Modeling
- Author : Christian C. Enz,Eric A. Vittoz
- Publisher : John Wiley & Sons
- Release Date : 2006-08-14
- Total pages : 328
- ISBN : 9780470855454
- File Size : 12,6 Mb
- Total Download : 824
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Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.
Compact Hierarchical Bipolar Transistor Modeling with Hicum
- Author : Michael Schrter,Anjan Chakravorty
- Publisher : World Scientific
- Release Date : 2010
- Total pages : 753
- ISBN : 9789814273213
- File Size : 25,7 Mb
- Total Download : 293
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Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
FinFET Modeling for IC Simulation and Design
- Author : Yogesh Singh Chauhan,Darsen Duane Lu,Vanugopalan Sriramkumar,Sourabh Khandelwal,Juan Pablo Duarte,Navid Payvadosi,Ai Niknejad,Chenming Hu
- Publisher : Academic Press
- Release Date : 2015-03-17
- Total pages : 304
- ISBN : 9780124200852
- File Size : 28,7 Mb
- Total Download : 328
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Download FinFET Modeling for IC Simulation and Design in PDF, Epub, and Kindle
This book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: Why you should use FinFET The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG) Parameter extraction in BSIM-CMG FinFET circuit design and simulation Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts’ insight into the specifications of the standard The first book on the industry-standard FinFET model - BSIM-CMG
Substrate Noise
- Author : Edoardo Charbon,Ranjit Gharpurey,Paolo Miliozzi,Robert G. Meyer,Alberto L. Sangiovanni-Vincentelli
- Publisher : Springer Science & Business Media
- Release Date : 2007-05-08
- Total pages : 172
- ISBN : 9780306481710
- File Size : 39,9 Mb
- Total Download : 213
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In the past decade, substrate noise has had a constant and significant impact on the design of analog and mixed-signal integrated circuits. Only recently, with advances in chip miniaturization and innovative circuit design, has substrate noise begun to plague fully digital circuits as well. To combat the effects of substrate noise, heavily over-designed structures are generally adopted, thus seriously limiting the advantages of innovative technologies. Substrate Noise: Analysis and Optimization for IC Design addresses the main problems posed by substrate noise from both an IC and a CAD designer perspective. The effects of substrate noise on performance in digital, analog, and mixed-signal circuits are presented, along with the mechanisms underlying noise generation, injection, and transport. Popular solutions to the substrate noise problem and the trade-offs often debated by designers are extensively discussed. Non-traditional approaches as well as semi-automated techniques to combat substrate noise are also addressed. Substrate Noise: Analysis and Optimization for IC Design will be of interest to researchers and professionals interested in signal integrity, as well as to mixed signal and RF designers.
Distortion Analysis of Analog Integrated Circuits
- Author : Piet Wambacq,Willy M.C. Sansen
- Publisher : Springer Science & Business Media
- Release Date : 2013-04-17
- Total pages : 501
- ISBN : 9781475750034
- File Size : 37,9 Mb
- Total Download : 101
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The analysis and prediction of nonlinear behavior in electronic circuits has long been a topic of concern for analog circuit designers. The recent explosion of interest in portable electronics such as cellular telephones, cordless telephones and other applications has served to reinforce the importance of these issues. The need now often arises to predict and optimize the distortion performance of diverse electronic circuit configurations operating in the gigahertz frequency range, where nonlinear reactive effects often dominate. However, there have historically been few sources available from which design engineers could obtain information on analysis tech niques suitable for tackling these important problems. I am sure that the analog circuit design community will thus welcome this work by Dr. Wambacq and Professor Sansen as a major contribution to the analog circuit design literature in the area of distortion analysis of electronic circuits. I am personally looking forward to hav ing a copy readily available for reference when designing integrated circuits for communication systems.
Low-Power High-Level Synthesis for Nanoscale CMOS Circuits
- Author : Saraju P. Mohanty,Nagarajan Ranganathan,Elias Kougianos,Priyardarsan Patra
- Publisher : Springer Science & Business Media
- Release Date : 2008-05-31
- Total pages : 302
- ISBN : 9780387764740
- File Size : 44,9 Mb
- Total Download : 599
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Download Low-Power High-Level Synthesis for Nanoscale CMOS Circuits in PDF, Epub, and Kindle
This self-contained book addresses the need for analysis, characterization, estimation, and optimization of the various forms of power dissipation in the presence of process variations of nano-CMOS technologies. The authors show very large-scale integration (VLSI) researchers and engineers how to minimize the different types of power consumption of digital circuits. The material deals primarily with high-level (architectural or behavioral) energy dissipation.